Jane Edwards
Raytheon Technologies and GlobalFoundries have teamed up to develop and bring to market a gallium nitride on silicon semiconductor to help advance 5G wireless connectivity.
GlobalFoundries said Thursday it will secure licensing rights to Raytheon’s GaN-on-Si technology and build the chip at its Fab 9 facility in Burlington, Vermont, under the partnership agreement.
The companies expect the GaN chip offering to increase radio frequency performance to support future 5G and 6G wireless and mobile applications.
GlobalFoundries CEO Tom Caulfield said the company’s partnership with Raytheon is a key step to ensuring the development and manufacturing capability of new platforms for future 5G applications.
“This partnership will enable everything from AI-supported phones and driverless cars to the smart grid, as well as governments’ access to data and networks which are essential to national security,” Caulfield added.
GlobalFoundries, which has nearly 2,000 employees at Fab 9, has invested $15 billion in U.S. chip development efforts over the past decade and intends to broaden global capacity and meet government and industry clients’ demand by advancing a twofold increase in this year’s planned investment in semiconductor development.
